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2SA965 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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2SA965 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page  2SA965 2006-11-09 3 Collector current IC (mA) VCE (sat) – IC Collector-emitter voltage VCE (V) IC – VCE Ambient temperature Ta (°C) PC – Ta 20 0 40 60 100 120 1.0 0.4 0 0.2 0.6 0.8 80 140 180 160 Collector current IC (mA) hFE – IC Base-emitter voltage VBE (V) IC – VBE −600 −800 0 0 −400 −200 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Ta = 100°C 25 −25 Common emitter VCE = −5 V −1000 0 0 −800 −600 −400 −200 −2 −4 −6 −8 −10 −12 Common emitter Ta = 25°C −5 −15 −10 IB = −1 mA −7 −3 −4 −2 −14 0 −300 Common emitter IC/IB = 10 −3 −0.03 −3 −1 −0.3 −0.1 −0.05 −10 −30 −100 −1000 Ta = 100°C −25 25 −0.5 Collector-emitter voltage VCE (V) Safe Operating Area −3000 −1 −0.5 −3 −1 −3 −10 −30 −100 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* 100 ms* DC operation −300 −1000 −100 −300 −10 −30 −5 −50 −500 −5 −50 1000 10 −3 500 300 100 50 −10 −30 −100 −300 −1000 Ta = 100°C 25 −25 30 Common emitter VCE = −5 V |
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