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MP4209 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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MP4209 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page MP4209 2006-10-27 3 Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current IDR ― ― ― 3 A Pulse drain reverse current IDRP ― ― ― 12 A Diode forward voltage VDSF IDR = 3 A, VGS = 0 V ― ― −1.5 V Reverse recovery time trr ― 100 ― ns Reverse recovery charge Qrr IDR = 3 A, VGS = 0 V dIDR/dt = 50 A/μs ― 0.2 ― μC Marking MP4209 JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Codice articolo simile - MP4209_07 |
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Descrizione simile - MP4209_07 |
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