2SK3236

2006-11-17

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3236

Switching Regulator Applications, DC-DC Converter and

Motor Drive Applications

• 4-V gate drive

Characteristics

Symbol

Rating

Unit

Drain-source voltage

60

V

60

V

Gate-source voltage

±20

V

DC

(Note 1)

35

Drain current

Pulse

(Note 1)

105

A

Drain power dissipation (Tc

= 25°C)

30

W

Single pulse avalanche energy

(Note 2)

68

mJ

Avalanche current

35

A

Repetitive avalanche energy (Note 3)

3.0

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

4.16

°C/W

Thermal resistance, channel to ambient

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)