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2SJ669 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SJ669 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ669 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = −60 V, VGS = 0 V — — −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V Drain−source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −35 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.16 0.25 Drain−source ON-resistance RDS (ON) VGS = −10 V, ID = −2.5 A — 0.12 0.17 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.5 5.0 — S Input capacitance Ciss — 700 — Reverse transfer capacitance Crss — 60 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 90 — pF Rise time tr — 14 — Turn−on time ton — 24 — Fall time tf — 14 — Switching time Turn−off time toff — 95 — ns Total gate charge (gate−source plus gate−drain) Qg — 15 — Gate−source charge Qgs — 11 — Gate−drain (“Miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 40 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / μS — 32 — nC Marking Duty <= 1%, tw = 10 μs −10 V 0 V VGS RL = 12 Ω VDD ∼− −30 V ID = −2.5 A Output J669 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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