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2SJ669 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte 2SJ669
Spiegazioni elettronici  Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ669 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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2SJ669
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
−100
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Drain−source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 20 V
−35
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −2.5 A
0.16
0.25
Drain−source ON-resistance
RDS (ON)
VGS = −10 V, ID = −2.5 A
0.12
0.17
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
2.5
5.0
S
Input capacitance
Ciss
700
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
90
pF
Rise time
tr
14
Turn−on time
ton
24
Fall time
tf
14
Switching time
Turn−off time
toff
95
ns
Total gate charge (gate−source
plus gate−drain)
Qg
15
Gate−source charge
Qgs
11
Gate−drain (“Miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
4
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
40
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / μS
32
nC
Marking
Duty <= 1%, tw = 10 μs
−10 V
0 V
VGS
RL =
12
Ω
VDD ∼− −30 V
ID = −2.5 A
Output
J669
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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