2SK1120_06 datasheet(2/6 Pages) TOSHIBA

Il numero della parte	2SK1120

Spiegazioni elettronici	Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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2SK1120

2006-11-09

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

—

±100

nA

Drain cut−off current

IDSS

VDS = 800 V, VGS = 0 V

—

300

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

1000

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.5

—

3.5

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 4 A

—

1.5

1.8

Ω

Forward transfer admittance

|Yfs|

VDS = 20 V, ID = 4 A

2.0

4.0

—

S

Input capacitance

Ciss

—

1300

—

Reverse transfer capacitance

Crss

—

100

—

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

—

180

—

pF

Rise time

tr

—

25

—

Turn−on time

ton

—

40

—

Fall time

tf

—

20

—

Switching time

Turn−off time

toff

—

100

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

120

—

Gate−source charge

Qgs

—

70

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 8 A

—

50

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

8

A

Pulse drain reverse current

(Note 1)

IDRP

—

24

A

Forward voltage (diode)

VDSF

IDR = 8 A, VGS = 0 V

—

−1.9

V

Marking

K1120

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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