2SC2655 datasheet(4/5 Pages) TOSHIBA

Il numero della parte	2SC2655

Spiegazioni elettronici	Silicon NPN Epitaxial Type (PCT Process)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SC2655

2006-11-09

4

Collector current IC (A)

VBE (sat) – IC

IC – VBE

Base-emitter voltage VBE (V)

Collector-emitter voltage VCE (V)

Safe Operating Area

Ambient temperature Ta (°C)

PC – Ta

600

0

40

80

120

200

240

160

200

400

800

1000

Ta = −55°C

25

Common emitter

IC/IB = 20

100

5

3

1

0.5

0.3

0.1

0.01

0.03

0.1

0.3

1

0

2.0

0

2.0

0.5

1.0

1.5

0.4

0.8

1.2

1.6

Common emitter

VCE = 2 V

Ta = 100°C

25

−55

0.2

1

3

10

30

0.01

0.03

1

5

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated linearly

with increase in temperature.

IC max (continuous)

IC max (pulsed)*

VCEO max

DC operation

Ta = 25°C

1 ms*

10 ms*

0.1

0.3

0.5

0.05

0.5

100 ms*

1 s*

3

100

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