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2SC2383 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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2SC2383 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC2383 2006-11-09 4 Collector-base voltage VCB (V) Cob – VCB Collector current IC (mA) Collector-emitter voltage VCE (V) Safe Operating Area fT – IC 500 10 100 30 50 3 10 30 Common emitter Ta = 25°C VCE = 5 V 2 100 300 300 3 1 10 30 100 30 2 5 10 100 50 Common emitter f = 1 MHz Ta = 25°C 3 10 30 3 0.5 0.005 0.1 0.3 300 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. VCEO max IC max (pulsed)* 1 ms* 100 ms* IC max = 1 A DC operation Ta = 25°C 10 ms* 0.03 0.01 0.05 100 |
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