2SC2383 datasheet(4/5 Pages) TOSHIBA

Il numero della parte	2SC2383

Spiegazioni elettronici	Silicon NPN Epitaxial Type (PCT Process)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SC2383

2006-11-09

4

Collector-base voltage VCB (V)

Cob – VCB

Collector current IC (mA)

Collector-emitter voltage VCE (V)

Safe Operating Area

fT – IC

500

10

100

30

50

3

10

30

Common emitter

Ta = 25°C

VCE = 5 V

2

100

300

3

1

10

30

100

30

2

5

10

100

50

Common emitter

f = 1 MHz

Ta = 25°C

3

10

30

3

0.5

0.005

0.1

0.3

300

1

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated linearly

with increase in temperature.

VCEO max

IC max (pulsed)*

1 ms*

100 ms*

IC max = 1 A

DC operation Ta = 25°C

10 ms*

0.03

0.01

0.05

100

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