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2SC2236 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte 2SC2236
Spiegazioni elettronici  Silicon NPN Epitaxial Type (PCT Process)
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2236 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

  2SC2236 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2236 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2236 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2236 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC2236
2006-11-09
3
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector-emitter voltage VCE (V)
IC – VCE
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Base-emitter voltage VBE (V)
Ambient temperature Ta (°C)
IC – VBE
PC – Ta
Collector current IC (mA)
20
0
40
60
100
120
1000
200
0
400
600
80
140
160
800
10
1600
0
0
600
400
200
2
4
6
Common emitter
Ta = 25°C
8
6
IB = 1 mA
8
4
3
2
14
16
18
800
1200
1000
1400
10
12
0
300
Common emitter
VCE = 2 V
1
50
30
10
3
30
100
3000
100
10
1000
500
300
1000
Ta = 100°C
25
−25
1600
0
0
600
400
200
0.2
0.4
0.6
Common emitter
VCE = 2 V
0.8
1.4
1.6
1.8
800
1200
1000
1400
1.0
1.2
Ta = 100°C
25
−25
300
Common emitter
IC/IB = 50
5
1
3
0.05
0.03
0.01
3
30
100
3000
0.1
10
1000
0.5
0.3
1
Ta = −25°C
25
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.02
0.3
0.1
0.3
0.5
1
3
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1
VCEO max
5
3
0.05
10
30
1 s*


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