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2SC2235_06 Datasheet(Scheda tecnica) 3 Page - Toshiba Semiconductor

Numero della parte 2SC2235_06
Dettagli  Silicon NPN Epitaxial Type (PCT Process)
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Produttore  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC2235
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
Base-emitter voltage VBE (V)
Ambient temperature Ta (°C)
IC – VBE
PC – Ta
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Safe Operating Area
10
3
30
100
300
1000
100
10
30
50
300
1000
500
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
1000
0
0
600
400
200
2
4
6
Common emitter
Ta = 25°C
10
7
IB = 1 mA
15
8
4
3
2
10
12
14
800
5
0
300
Common emitter
IC/IB = 10
0.5
3
0.3
0.05
0.03
0.01
10
30
100
1000
0.1
Ta = 100°C
25
−25
0.2
0
0.4
0.6
0.8
1.0
800
0
200
400
1.2
600
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
20
0
40
60
100
120
1000
200
0
400
600
80
140
160
800
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
0.5
5
10
30
50
100
300
500
10
50
1000
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC
operation
3
3000
1
1000
3
5
30
100
300 500




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