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FDG8850NZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG8850NZ
Spiegazioni elettronici  Dual N-Channel PowerTrench짰 MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG8850NZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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tm
April 2007
©2007 Fairchild Semiconductor Corporation
FDG8850NZ Rev.B
www.fairchildsemi.com
1
FDG8850NZ
Dual N-Channel PowerTrench® MOSFET
30V,0.75A,0.4
Ω
Features
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Very low level gate drive requirements allowing operation
in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as
a replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with differ-
ent bias resistor values.
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±12
V
ID
Drain Current
-Continuous
0.75
A
-Pulsed
2.2
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.36
W
0.30
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
RθJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
350
°C/W
RθJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1b)
415
Device Marking
Device
Reel Size
Tape Width
Quantity
.50
FDG8850NZ
7”
8mm
3000 units
S1
G1
D2
D1
G2
S2
S1
S2
G2
D1
D2
G1
Pin 1
SC70-6
Q1
Q2


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