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KBL410 Scheda tecnica(PDF) 1 Page - Pan Jit International Inc. |
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KBL410 Scheda tecnica(HTML) 1 Page - Pan Jit International Inc. |
1 / 2 page PAGE . 1 STAD-OCT.28.2005 KBL400 ~ KBL4010 FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99% Sn above can meet RoHS environment substance directive request IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER MECHANICAL DATA Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting position: Any Weight: 0.2 ounce, 5.6 grams MAXIMUM RATINGSAND ELECTRICALCHARACTERISTICS Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. For Capacitive load derate current by 20%. NOTES: 1. Thermal resistance from junction to ambient with units mounted on 0.3 x 0.3 x 0.11" thick( 7.5 x 7.5 x 0.3cm) AL Plate. 2. Thermal resistance from junction to lead with units mounted on P.C.B with 0.375"( 9.5mm) lead length and 0.5 x 0.5” ( 12 x 12 mm) copper pads. VOLTAGE 50 to 1000 Volts 4.0 Amperes CURRENT R E T E M A R A PL O B M Y S0 0 4 L B K1 0 4 L B K2 0 4 L B K4 0 4 L B K6 0 4 L B K8 0 4 L B K0 1 0 4 L B KS T I N U e g a t l o V e s r e v e R k a e P t n e r r u c e R m u m i x a M V M R R 0 50 0 10 0 20 0 40 0 60 0 80 0 0 1V e g a t l o V t u p n I e g d i r B S M R m u m i x a M V S M R 5 30 70 4 10 8 20 2 40 6 50 0 7V e g a t l o V g n i k c o l B C D m u m i x a M V C D 0 50 0 10 0 20 0 40 0 60 0 80 0 0 1V t a d a o L e v i t s i s e R r o F t n e r r u C d r a w r o F e g a r e v A m u m i x a M T A 0 5 = OC I ( F) V A 0 . 4A t n e r r u C d a o l r e v O e g r u S e l c y C e n O k a e P I M S F 0 0 2A A 0 . 4 t a t n e m e l E e g d i r B r e p e g a t l o V d r a w r o F m u m i x a M V F 1 . 1V T @ d e t a R t a t n e r r u C e g a k a e L e s r e v e R m u m i x a M A 5 2 = OC T @ e g a t l o V g n i k c o l B c D A 0 0 1 = OC I R 0 1 0 0 0 1 µA I2 ) s m 5 3 . 8 < t ( g n i s u f r o f g n i t a R t I2 t3 9A 2 t ) 1 e t o N ( g e l r e p e c n a t s i s e R l a m r e h T l a c i p y T ) 2 e t o N ( R θ A J R θ L J 9 1 4 . 2 O W / C e g n a R e r u t a r e p m e T e g a r o t S d n a n o i t c n u J g n i t a r e p O T J ,T G T S 0 5 1 + o t 5 5 - O C |
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