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FDG6342L Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG6342L Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page tm September 2007 ©2007 Fairchild Semiconductor Corporation FDG6342L Rev.B1 www.fairchildsemi.com 1 FDG6342L Integrated Load Switch Features Max rDS(on) = 150mΩ at VGS = 4.5V, ID = –1.5A Max rDS(on) = 195mΩ at VGS = 2.5V, ID = –1.3A Max rDS(on) = 280mΩ at VGS = 1.8V, ID = –1.1A Max rDS(on) = 480mΩ at VGS = 1.5V, ID = –0.9A Control MOSFET (Q1) includes Zener protection for ESD ruggedness ( >4KV Human body model) High performance trench technology for extremely low rDS(on) Compact industry standard SC70-6 surface mount package RoHS Compliant General Description This device is particularly suited for compact power management in portable electronic equipment where 1.5V to 8V input and 1.5A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. Applications Power management Load switch MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VIN Gate to Source Voltage (Q2) ±8 V VON/OFF Gate to Source Voltage (Q1) –0.5 to 8 V ILoad Load Current -Continuous (Note 2) –1.5 A -Pulsed (Note 2) –6 PD Power Dissipation for Single Operation (Note 1a) 0.36 W (Note 1b) 0.3 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 °C/W RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 Device Marking Device Package Reel Size Tape Width Quantity .42 FDG6342L SC70-6 7’’ 8mm 3000units 1 2 3 Vin,R1 ON/OFF R1,C1 Vout,C1 4 5 6 Vout,C1 R2 Q2 Q1 VDROP Equivalent Circuit OUT IN ON/OFF Pin 1 SC70-6 See Application Circuit |
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