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BUZ102S Scheda tecnica(PDF) 5 Page - Infineon Technologies AG

Il numero della parte BUZ102S
Spiegazioni elettronici  SIPMOS Power Transistor
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ102S Scheda tecnica(HTML) 5 Page - Infineon Technologies AG

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BUZ 102S
Data Book
5
05.99
Power Dissipation
Ptot = f (TC)
0
20
40
60
80
100 120 140 160 ˚C 190
TC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
W
2.8
BUZ102S
Drain current
ID = f (TC)
parameter:
VGS ≥ 10 V
0
20
40
60
80
100 120 140 160 ˚C 190
TC
0
5
10
15
20
25
30
35
40
45
50
A
60
BUZ102S
Transient thermal impedance
ZthJC = f (tp)
parameter :
D = tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
tp
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ102S
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
ID = f (VDS)
parameter :
D = 0 , TC = 25 ˚C
10
-1
10
0
10
1
10
2
V
VDS
0
10
1
10
2
10
3
10
A
BUZ102S
DC
10 ms
1 ms
100 µs
t
p
= 19.0µs


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