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IRF3710LPBF Scheda tecnica(PDF) 3 Page - International Rectifier

Il numero della parte IRF3710LPBF
Spiegazioni elettronici  HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF3710LPBF Scheda tecnica(HTML) 3 Page - International Rectifier

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IRF3710S/LPbF
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
3.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
3.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
0.10
1.00
10.00
100.00
1000.00
TJ = 25°C
TJ = 175°C
VDS = 15V
20µs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
J
°
V
=
I
=
GS
D
10V
57A


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