BCP54 datasheet(1/2 Pages) DIOTEC

Il numero della parte	BCP54

Spiegazioni elettronici	Surface Mount General Purpose Si-Epi-Planar Transistors

Download	2 Pages

Scroll/Zoom	100%

Produttore elettronici	DIOTEC [Diotec Semiconductor]

Homepage	http://www.diotec.com

Logo

1 / 2 page

BCP54 ... BCP56

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

NPN

Version 2006-06-26

Dimensions - Maße [mm]

1 = B

2/4 = C

3 = E

Power dissipation

Verlustleistung

1.3 W

Plastic case

Kunststoffgehäuse

SOT-223

Weight approx.

Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

BCP54

BCP55

BCP56

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

B open

VCEO

45 V

60 V

80 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

45 V

60 V

100 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

5 V

Power dissipation – Verlustleistung

Ptot

1.3 W 1)

Collector current – Kollektorstrom (dc)

IC

1 A

Peak Collector current – Kollektor-Spitzenstrom

ICM

1.5 A

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 2)

VCE = 2 V, IC = 5 mA

all groups

hFE

25

VCE = 2 V, IC = 150 mA

Group -6

Group -10

Group -16

hFE

40

63

100

–

100

160

250

VCE = 2 V, IC = 500 mA

all groups

hFE

25

–

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

IC = 500 mA, IB = 50 mA

VCEsat

–

0.5 V

Base-Emitter voltage – Basis-Emitter-Spannung 2)

IC = 500 mA, IB = 50 mA

VBE

––

1 V

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

1.65

2.3

3.25

0.7

6.5

±0.2

3

±0.1

1

2

3

4

Type

Code

Codice articolo simile - BCP54

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NXP Semiconductors	BCP54	43Kb / 8P	NPN medium power transistors 1999 Apr 08
Infineon Technologies A...	BCP54	827Kb / 7P	NPN Silicon AF Transistors 2011-10-13
Nexperia B.V. All right...	BCP54	249Kb / 12P	45 V, 1 A NPN medium power transistors Rev. 9 - 6 January 2023
Siemens Semiconductor G...	BCP54	131Kb / 5P	NPN Silicon AF Transistors (For AF driver and output stages High collector current)
SHENZHEN YONGERJIA INDU...	BCP54	186Kb / 3P	TRANSISTOR (NPN)

More results

Descrizione simile - BCP54

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Diotec Semiconductor	BCW29	101Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	MMBT4403	99Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	BC856	99Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	BC856W	99Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	MMBT5401	111Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	MMBT5401	108Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	MMBT5551	99Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	BCW31	101Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	BC817	116Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors
	BC846W	98Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors

More results

BCP54 Scheda tecnica(PDF) 1 Page - Diotec Semiconductor

BCP54 Scheda tecnica(HTML) 1 Page - Diotec Semiconductor

Codice articolo simile - BCP54

Descrizione simile - BCP54

Html Pages

1 2

Scheda tecnica Scarica

Link URL