IRFR4104PBF datasheet(6/12 Pages) IRF

Il numero della parte	IRFR4104PBF

Spiegazioni elettronici	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )

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Produttore elettronici	IRF [International Rectifier]

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IRFR/U4104PbF

6

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QG

QGS

QGD

VG

Charge

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 14. Threshold Voltage Vs. Temperature

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

-

VDD

DRIVER

A

15V

20V

VGS

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (°C)

0

100

200

300

400

500

600

I D

TOP

9.2A

13A

BOTTOM

42A

-75

-50

-25

0

25

50

75

100 125 150 175

TJ , Temperature ( °C )

1.0

2.0

3.0

4.0

ID = 250µA

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