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IRF1104PBF Scheda tecnica(PDF) 7 Page - International Rectifier

Il numero della parte IRF1104PBF
Spiegazioni elettronici  HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF1104PBF Scheda tecnica(HTML) 7 Page - International Rectifier

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IRF1104PbF
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*


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