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IRF1104PBF Scheda tecnica(PDF) 4 Page - International Rectifier |
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IRF1104PBF Scheda tecnica(HTML) 4 Page - International Rectifier |
4 / 9 page IRF1104PbF 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 0 1000 2000 3000 4000 5000 V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° 1 10 100 1000 10000 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms 0 25 50 75 100 0 5 10 15 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 60A V = 20V DS V = 32V DS |
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