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FDG8842CZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG8842CZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page www.fairchildsemi.com 2 ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ID = –250μA, VGS = 0V Q1 Q2 30 –25 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C ID = –250μA, referenced to 25°C Q1 Q2 25 –21 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V VDS = –20V, VGS = 0V Q1 Q2 1 –1 μA IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V VGS = –8V, VDS= 0V Q1 Q2 ±10 –100 μA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA VGS = VDS, ID = –250μA Q1 Q2 0.65 –0.65 1.0 –0.8 1.5 –1.5 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C ID = –250μA, referenced to 25°C Q1 Q2 –3.0 1.8 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 0.75A VGS = 2.7V, ID = 0.67A VGS = 4.5V, ID = 0.75A ,TJ = 125°C Q1 0.25 0.29 0.36 0.4 0.5 0.6 Ω VGS = –4.5V, ID = –0.41A VGS = –2.7V, ID = –0.25A VGS = –4.5V, ID = –0.41A ,TJ = 125°C Q2 0.87 1.20 1.22 1.1 1.5 1.9 gFS Forward Transconductance VDS = 5V, ID = 0.75A VDS = –5V, ID = –0.41A Q1 Q2 3 8 S Dynamic Characteristics Ciss Input Capacitance Q1 VDS = 10V, VGS = 0V, f= 1MHZ Q2 VDS = –10V, VGS = 0V, f= 1MHZ Q1 Q2 90 70 120 100 pF Coss Output Capacitance Q1 Q2 20 30 30 40 pF Crss Reverse Transfer Capacitance Q1 Q2 15 15 25 25 pF Switching Characteristics td(on) Turn-On Delay Time Q1 VDD = 5V, ID = 0.5A, VGS = 4.5V,RGEN = 6Ω Q2 VDD = –5V, ID = –0.5A, VGS = –4.5V,RGEN = 6Ω Q1 Q2 4 6 10 12 ns tr Rise Time Q1 Q2 1 16 10 29 ns td(off) Turn-Off Delay Time Q1 Q2 9 35 18 56 ns tf Fall Time Q1 Q2 1 40 10 64 ns Qg Total Gate Charge Q1 VGS =4.5V, VDD = 5V, ID = 0.75A Q2 VGS = –4.5V, VDD = –5V, ID = –0.41A Q1 Q2 1.03 1.20 1.44 1.68 nC Qgs Gate to Source Charge Q1 Q2 0.29 0.31 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 0.17 0.22 nC (note 2) |
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