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MMBD914 Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MMBD914 Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page - 840 - 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) 0.024(0.61) 0.018(0.45) 0.080(2.05) 0.070(1.78) 0.041(1.05) 0.047(0.89) 0.120(3.05) 0.104(2.65) 0.006(0.15) 0.001(0.013) 0.043(1.10) 0.035(0.89) BAS16/MMBD4148/MMBD914 Surface Mount Switching Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance Mechanical Data Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: See diagram Marking: KA6, KA2, K5D Weight: 0.008 gram (approx. ) SOT-23 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectifier Output Current Io 200 mA Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S IFSM 2.0 1.0 A Power Dissipation (Note 1) Pd 350 mW Thermal Resistance Junction to Ambient Air R θJA 357 OC/W Operating and Storage Temperature Range TJ, TSTG -65 to + 150 OC Electrical Characteristics Type Number Symbol Min Max Units Reverse Breakdown Voltage (Note 3) IR=100uA V(BR) 75 V Forward Voltage IF=1.0mA IF= 10mA IF = 50mA IF=150mA VF - 0.715 0.855 1.0 1.25 V Peak Reverse Current VR=75V VR=75V, Tj=150 ℃ VR=25V, TJ=150 ℃ VR=20V IR - 1.0 50 30 25 uA nA Junction Capacitance VR=0, f=1.0MHz Cj - 2.0 pF Reverse Recovery Time (Note 2) trr - 4.0 nS Notes: 1. Device Mounted on Glass Epoxy PCB 1.6”x1.6”x0.06”, Mounting pad for the Cathode Lead Min. 0.93 inches. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100 Ω. |
Codice articolo simile - MMBD914 |
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Descrizione simile - MMBD914 |
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