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BA159G Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BA159G Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 BA157G - BA159G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: DO-41 Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, Lead free., solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260 oC /10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension Weight: 0.34 gram Maximum Ratings and Electrical Characteristics Rating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol BA157G BA158G BA159G Units Maximum Recurrent Peak Reverse Voltage VRRM 400 600 1000 V Maximum RMS Voltage VRMS 280 420 700 V Maximum DC Blocking Voltage VDC 400 600 1000 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length @TA = 45 oC I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 1.2 V Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=100 oC IR 5.0 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 150 250 nS Typical Junction Capacitance ( Note 2 ) Cj 15 pF Typical thermal Resistance (Note 3) RθJA 60 oC/W Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. |
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