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BUZ110S Scheda tecnica(PDF) 1 Page - Infineon Technologies AG |
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BUZ110S Scheda tecnica(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page BUZ 110S Data Book 1 05.99 SIPMOS Power Transistor Product Summary Drain source voltage 55 VDS V Drain-Source on-state resistance Ω 0.01 RDS(on) ID Continuous drain current 80 A Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175 ˚C operating temperature Pin 1 Pin 2 Pin 3 G D S Packaging Type Package Ordering Code BUZ110S Tube P-TO220-3-1 Q67040-S4005-A2 BUZ110S E3045A Tape and Reel Q67040-S4005-A6 P-TO263-3-2 Tube BUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5 Maximum Ratings,at Tj = 25 ˚C unless otherwise specified Parameter Symbol Unit Value Continuous drain current TC = 25 ˚C, limited by bond wire TC = 100˚C 80 66 ID A Pulsed drain current TC = 25 ˚C IDpulse 320 Avalanche energy, single pulse ID =80 A, VDD =25V, RGS =25 Ω mJ EAS 460 Avalanche energy, periodic limited by Tjmax 20 EAR Reverse diode d v/dt IS =80 A, VDS =40V, di/dt = 200 A/µs, Tjmax = 175 ˚C d v/dt 6 kV/ µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot 200 W Operating and storage temperature Tj , Tstg ˚C -55... +175 55/175/56 IEC climatic category; DIN IEC 68-1 |
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