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RJK4518DPK Scheda tecnica(PDF) 1 Page - Renesas Technology Corp |
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RJK4518DPK Scheda tecnica(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page Rev.1.00 Mar 20, 2007 page 1 of 3 RJK4518DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1529-0100 Rev.1.00 Mar 20, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D S G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 450 V Gate to source voltage VGSS ±30 V Drain current ID 39 A Drain peak current ID (pulse) Note1 117 A Body-drain diode reverse drain current IDR 39 A Body-drain diode reverse drain peak current IDR (pulse) Note1 117 A Avalanche current IAP Note3 10 A Avalanche energy EAR Note3 5.6 mJ Channel dissipation Pch Note2 200 W Channel to case thermal impedance θch-c 0.625 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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