RJK4514DPK datasheet(2/4 Pages) RENESAS

Il numero della parte	RJK4514DPK

Spiegazioni elettronici	Silicon N Channel MOS FET High Speed Power Switching

Download	4 Pages

Scroll/Zoom	100%

Produttore elettronici	RENESAS [Renesas Technology Corp]

Homepage	http://www.renesas.com

Logo

2 / 4 page

RJK4514DPK

Rev.1.00 Feb 13, 2007 page 2 of 3

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

450

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 450 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

0.25

0.30

Ω

ID = 11 A, VGS = 10 V

Note4

Input capacitance

Ciss

—

1800

—

pF

Output capacitance

Coss

—

200

—

pF

Reverse transfer capacitance

Crss

—

27

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

35

—

ns

Rise time

tr

—

58

—

ns

Turn-off delay time

td(off)

—

95

—

ns

Fall time

tf

—

44

—

ns

ID = 11 A

VGS = 10 V

RL = 20.5

Ω

Rg = 10

Ω

Total gate charge

Qg

—

46

—

nC

Gate to source charge

Qgs

—

10

—

nC

Gate to drain charge

Qgd

—

22

—

nC

VDD = 360 V

VGS = 10 V

ID = 22 A

Body-drain diode forward voltage

VDF

—

0.99

1.65

V

IF = 22 A, VGS = 0

Note4

Body-drain diode reverse recovery time

trr

—

340

—

ns

IF = 22 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 4. Pulse test

Codice articolo simile - RJK4514DPK

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	RJK4514DPK	212Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	RJK4514DPK-00-T0	212Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	RJK4514DPK	212Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	RJK4514DPK	212Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching

More results

Descrizione simile - RJK4514DPK

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	H7N0608LD	118Kb / 12P	Silicon N Channel MOS FET High Speed Power Switching
	H5N1503P	81Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6015DPK	107Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H7N0310LD	131Kb / 14P	Silicon N Channel MOS FET High Speed Power Switching
	2SK2788	82Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK5013DPE	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJL5014DPK	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H5N5006DL	113Kb / 10P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005LD	145Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching
	HAT2179R	126Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005DL	139Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching

More results

RJK4514DPK Scheda tecnica(PDF) 2 Page - Renesas Technology Corp

RJK4514DPK Scheda tecnica(HTML) 2 Page - Renesas Technology Corp

Codice articolo simile - RJK4514DPK

Descrizione simile - RJK4514DPK

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL