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ML101J8 Scheda tecnica(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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ML101J8 Scheda tecnica(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 3 page ( 1 / 3 ) • High Output Power: 40mW (CW) , 60mW (Pulse) • Visible Light: 660nm (typ.) - Symbol Parameter Conditions Ratings Unit Po Light output power CW 45 mW Pulse(Note 2) 60 VRL Reverse voltage 2 V - Tc Case temperature -10 ~ +60 Tstg Storage temperature - -40 ~ +100 High-Density Optical Disc Drives DVD(Digital Versatile Disc)-RAM Drive as of December '99 Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department. Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1 µs ML1XX8 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660-nm and standard CW light output of 40mW. ML1XX8 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation. °C °C Symbol Parameter Test conditions Min. Typ. Max Unit Ith Threshold current CW - 57 mA Iop Operating current CW,Po=40mW - 117 mA Slope efficiency CW,Po=40mW -0.67 - mW/mA Peak wavelength CW,Po=40mW 660 nm Beam divergence angle (parallel) CW,Po=40mW 8.5 ° Beam divergence angle (perpendicular) CW,Po=40mW 22 ° Vop Operating voltage CW,Po=40mW 2.5 V 666 - 655 - - -- -- η λp θ// θ⊥ 3.0 ABSOLUTE MAXIMUM RATINGS Note 1) ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 °C) MITSUBISHI ELECTRIC TYPE NAME DESCRIPTION APPLICATION ML1XX8 SERIES FOR OPTICAL INFORMATION SYSTEMS ML101J8, ML120G8 MITSUBISHI LASER DIODES FEATURES |
Codice articolo simile - ML101J8 |
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Descrizione simile - ML101J8 |
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