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TC1313-AG1EUNTR Scheda tecnica(PDF) 6 Page - Microchip Technology |
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TC1313-AG1EUNTR Scheda tecnica(HTML) 6 Page - Microchip Technology |
6 / 28 page TC1313 DS21974A-page 6 © 2005 Microchip Technology Inc. TEMPERATURE SPECIFICATIONS Wake-Up Time (From SHDN2 mode), (VOUT2) tWK — 31 100 µs IOUT1 = IOUT2 = 50 mA Settling Time (From SHDN2 mode), (VOUT2) tS — 100 — µs IOUT1 = IOUT2 = 50 mA Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +5.5V Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Junction Temperature Range TJ -40 — +125 °C Steady state Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +150 °C Transient Thermal Package Resistances Thermal Resistance, 10L-DFN θJA — 41 — °C/W Typical 4-layer board with Internal Ground Plane and 2 Vias in Thermal Pad Thermal Resistance, 10L-MSOP θJA — 113 — °C/W Typical 4-layer board with Internal Ground Plane DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: VIN1 = VIN2 = SHDN1,2 =3.6V, COUT1 =CIN = 4.7 µF, COUT2 =1µF, L =4.7 µH, VOUT1 (ADJ) = 1.8V, IOUT1 = 100 ma, IOUT2 = 0.1 mA TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C. Parameters Sym Min Typ Max Units Conditions Note 1: The Minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VRX + VDROPOUT, VRX = VR1 or VR2. 2: VRX is the regulator output voltage setting. 3: TCVOUT2 = ((VOUT2max – VOUT2min) * 10 6)/(V OUT2 * DT). 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. 5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. 7: The integrated MOSFET switches have an integral diode from the LX pin to VIN, and from LX to PGND. In cases where these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not able to limit the junction temperature for these cases. 8: VIN1 and VIN2 are supplied by the same input source. |
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