ST2306 datasheet(3/8 Pages) STANSON

Il numero della parte	ST2306

Spiegazioni elettronici	N Channel Enhancement Mode MOSFET

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N Channel Enhancement Mode MOSFET

ST2306

3.5A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=250uA

30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

1.0

3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=20V

100

nA

VDS=30V,VGS=1.0V

1

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

TJ=55℃

10

uA

Drain-source On-Resistance

RDS(on)

VGS=10V,ID=3.5A

VGS=5V,ID=2.8A

0.055

0.075

0.07

0.95

Ω

Forward Tran conductance

gfs

VDS=4.5V,ID=2.5V

4.6

S

Diode Forward Voltage

VSD

IS=-1.25A,VGS=0V

0.77

1.2

V

Dynamic

Total Gate Charge

Qg

12.5

16

Gate-Source Charge

Qgs

2.4

Gate-Drain Charge

Qgd

VDS=15V,VGS=4.5V

ID≡2.5A

1.0

nC

Input Capacitance

Ciss

340

Output Capacitance

Coss

80

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V

F=1MHz

40

pF

8

20

Turn-On Time

td(on)

tr

12

30

17

35

Turn-Off Time

td(off)

tf

VDD=15V,RL=15Ω

ID=1.0A,VGEN=10V

RG=6Ω

8

20

nS

Page 3

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

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