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TDA3672 Scheda tecnica(PDF) 5 Page - NXP Semiconductors

Il numero della parte TDA3672
Spiegazioni elettronici  Very low dropout voltage/quiescent current 3.0 V voltage regulator with enable
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA3672 Scheda tecnica(HTML) 5 Page - NXP Semiconductors

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2000 Apr 26
5
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.0 V voltage regulator with enable
TDA3672
CHARACTERISTICS
VP = 14.4 V; Tamb =25 °C; measured in test circuit (see Fig.3); unless otherwise specified.
Notes
1. The regulator output will follow VP if VP <VREG +VREG(drop).
2. Limiting values as applicable for device type TDA3672AT: VP ≤ 45 V and −40 °C ≤ Tamb ≤ +125 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply voltage: pin VP
VP
supply voltage
regulator operating; note 1
3
14.4
45
V
Iq
quiescent current
VP = 14.4 V; IREG = 0 mA;
VI(EN) =0V
415
µA
VP = 14.4 V; IREG = 0 mA;
VI(EN) =5V
15
30
µA
5.5 V
≤ V
P ≤ 22 V; IREG =10mA
0.2
0.5
mA
5.5 V
≤ V
P ≤ 22 V; IREG =50mA
1.4
2.5
mA
Enable input: pin EN
VI(EN)
enable input voltage
enable off; VREG ≤ 0.8 V
−1
+1.0
V
enable on; VREG ≥ 2.7 V
3.0
18
V
II(EN)
enable input current
VI(EN) =5V
0.3
−µA
Regulator output: pin REG; note 2
VREG
output voltage
7.5 V
≤ VP ≤ 22 V; IREG = 0.5 mA 2.84
3.0
3.16
V
0.5 mA
≤ I
REG ≤ 100 mA;
Tamb ≤ 125 °C
2.81
3.0
3.19
V
5.5 V
≤ V
P ≤ 45 V; IREG = 0.5 mA;
Tamb ≤ 125 °C
2.81
3.0
3.19
V
VREG(drop)
dropout voltage
VP = 2.8 V; IREG =50mA;
Tamb ≤ 85 °C
0.18
0.3
V
VREG(stab)
long-term output voltage
stability
20
mV/1000 h
∆VREG(line) line regulation voltage
6.5 V
≤ VP ≤ 22 V; IREG = 0.5 mA −
130
mV
6.5 V
≤ V
P ≤ 45 V; IREG = 0.5 mA
150
mV
∆VREG(load) load output regulation voltage 0.5 mA ≤ IREG ≤ 50 mA
10
50
mV
SVRR
supply voltage ripple rejection
fi = 120 Hz; Vi(ripple) = 1 V (RMS);
IREG = 0.5 mA
50
60
dB
IREG(crl)
current limit
VREG > 2.5 V
0.17
0.25
A
ILO(rp)
output leakage current at
reverse polarity input
VP = −15 V; VREG ≤ 0.3 V
1
500
µA


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