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TDA1576T Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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TDA1576T Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
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6 / 16 page  1998 Nov 18 6 Philips Semiconductors Product specification FM/IF amplifier/demodulator circuit TDA1576T CHARACTERISTICS VP = 8.5 V; fIF = 10.7 MHz; RS =60 Ω; fm = 400 Hz with ∆f= ±22.5 kHz; 50 µs de-emphasis (C8-9 = 6.8 nF); Tamb =25 °C and measurements taken in Fig.1; unless otherwise specified. The demodulator circuit is adjusted at minimum second harmonic distortion for ViIF = 1 mV and a deviation ∆f= ±75 kHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage (pin 1) 7.5 8.5 15 V IP supply current V5 =V9 =V13 = 0 10 16 23 mA Reference voltage Vref reference voltage (pin 14) I14 = −1mA − 4.9 − V ∆Vref reference voltage dependence on temperature − 0.3 − %/K I14 maximum output current short-circuit current 4 6 7.5 mA R14 output resistor I14 < 1.2 mA − 60 150 Ω IF amplifier ViIF(rms) input sensitivity (RMS value; pin 17) −3 dB before limiting 14 22 35 µV R17-18 input resistance ViIF = 200 mV (RMS) 10 −− k Ω C17-18 input capacitance ViIF = 200 mV (RMS) − 5 − pF VoIF(p-p) output voltage at pins 3 and 7 (peak-to-peak value) Z3, 7 = 10 pF parallel to 1M Ω 610 680 750 mV R3-7 output resistance 200 250 300 Ω Demodulator R4-6 input resistance 20 30 40 k Ω C4-6 input capacitance − 1 2.5 pF R8, 9 output resistance 2.9 3.7 4.5 k Ω V8, 9 DC offset voltage on output pins at V4-6 =0 V5 > 3 V or V3-7 = 0 or V13 < 0.3 V − 0 ±100 mV demodulator efficiency − 40 − mV/ ° demodulator efficiency dependent on supply voltage − 6.2 − mV/ ° V/V DC voltage ratio 0.653 0.667 0.680 V/V dependence on temperature − 10−5 − 1/K V 14 ∆ V 14 T ∆ × ---------------------- V 14 ∆ I 14 ∆ ------------ V ∆ ϕ ∆ ------- V 8-9 ∆ ϕ ∆ -------------- V 8-9 ϕ ∆ V P 3V BE – () ----------------------------------------- V 8 V 9 + 2V 2 ------------------- V ∆ T ∆ ------- V 8 V 9 + 2V 2 ------------------- ∆ T ∆ ----------------------- |
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