FDD8424H datasheet(9/12 Pages) FAIRCHILD

Il numero della parte	FDD8424H

Spiegazioni elettronici	Dual N & P-Channel PowerTrench짰 MOSFET

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Typical Characteristics (Q2 P-Channel)T

J = 25°C unless otherwise noted

Figure 20. Gate Charge Characteristics

04

8

12

16

20

0

2

4

6

8

10

VDD = -25V

VDD = -20V

Qg, GATE CHARGE(nC)

VDD = -15V

I

D = -6.5A

0.1

1

10

100

1000

30

f = 1MHz

VGS = 0V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

40

2000

Figure 21. Capacitance vs Drain

to Source Voltage

Figure 22. Unclamped Inductive

Switching Capability

0.001

0.01

0.1

1

10

100

1

10

TJ = 25oC

TJ = 125oC

t

AV, TIME IN AVALANCHE(ms)

30

Figure 23. Maximum Continuous Drain

Current vs Case Temperature

25

50

75

100

125

150

0

5

10

15

20

25

RθJC = 3.5

oC/W

VGS = -4.5V

VGS = -10V

T

C

, CASE TEMPERATURE

(

o

C

)

Figure 24

110

0.1

1

10

100

DC

10ms

1ms

100us

10us

THIS AREA IS

LIMITED BY rds(on)

100

SINGLE PULSE

TJ = MAX RATED

RθJC = 3.5

oC/W

TC = 25

oC

-VDS, DRAIN to SOURCE VOLTAGE (V)

80

. Forward Bias Safe

Operating Area

Figure 25.

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

100

1000

10000

V

GS = -10V

SINGLE PULSE

RθJC = 3.5

o

C/W

t, PULSE WIDTH (s)

I = I25

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

150

T

C

–

125

------------------------

TC = 25

oC

Single Pulse Maximum

Power Dissipation

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9

FDD8424H Rev.C

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