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CZRW55C8V2-G Scheda tecnica(PDF) 1 Page - Comchip Technology |
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CZRW55C8V2-G Scheda tecnica(HTML) 1 Page - Comchip Technology |
1 / 4 page Page1 Parameter Power Dissipation (Note A) at 75 oC Peak Forward Surge Current Surge, 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) (Note B) Operating Junction and Storage Temperature Range m W Amps I FSM P D oC Comhip Technology Corporation . Tel:510-657-8671 . Fax: 657-8921 . www.comchiptech.com Units Value Symbols TJ 410 2 -55 to +150 Case: SOD-123, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram Mechanical Data: Maximum Ratings and Thermal Characterics Planar Die Constructions 410mW Power Dissipation Zener Voltages from 2.4V ~ 39V Ideally Suited for Automated Assembly Processes Features: Voltage: 2.4 ~ 29 Volts Power: 410 mW CZRW55C2V4-G thru CZRW55C39-G Surface Mount Zener Diodes Notes: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. “-G” suffix designated RoHS compliant version SOD-123 .154 (3.90) .141 (3.60) .110 (2.80) .098 (2.50) .005 (.12) Max. .016 (.40) Min. Dimensions in inches and (millimeters) |
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