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MC33989DW Scheda tecnica(PDF) 8 Page - Freescale Semiconductor, Inc |
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MC33989DW Scheda tecnica(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 66 page Analog Integrated Circuit Device Data 8 Freescale Semiconductor 33989 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS POWER OUTPUT (VDD1) IN STOP MODE (16) VDD1 Output Voltage IDD1 < = 2.0 mA VDDSTOP 4.75 5.00 5.25 V VDD1 Output Voltage IDD1 < = 10 mA VDDSTOP2 4.75 5.00 5.25 V IDD1 Stop Output Current to Wake-up SBC IDD1SWU 10 17 25 mA IDD1 Over Current to Wake-up Deglitcher Time (17) IDD1DGLT 40 55 75 µs Reset Threshold RSTSTOP1 4.5 4.6 4.7 V Reset Threshold RSTSTOP2 4.1 4.2 4.3 V Line Regulation (C at VDD1 = 47 µF Tantal) 5.5 V < VSUP < 27 V, IDD = 2.0 mA LRS — 5.0 25 mV Load Regulation (C at VDD1 = 47 µF Tantal) 1 mA < IDD < 10 mA LDS — 15 75 mV Max Decoupling Capacitor at VDD1 Pin, in Stop Mode(18) VDDst-cap — — 200 µF TRACKING VOLTAGE REGULATOR (V2) (19) V2 Output Voltage (C at V2 = 10 µF Tantal) I2 from 2.0 to 200 mA, 5.5 V < VSUP < 27 V V2 0.99 1.0 1.01 VDD1 I2 Output Current (for information only) Depending Upon External Ballast Transistor I2 200 — — mA V2 Control Drive Current Capability Worst Case at TJ = 125°C 12CTRL 0.0 — 10 mA V2LOW Flag Threshold V2LTH 3.75 4.0 4.25 V LOGIC OUTPUT PIN (MISO) (20) Low Level Output Voltage IOUT = 1.5 mA VOL 0.0 — 1.0 V High Level Output Voltage IOUT = 250 µA VOH VDD1-0.9 — VDD1 V Tri-Stated MISO Leakage Current 0 V < VMISO < VDD IHZ -2.0 — 2.0 µA Notes 16. If stop mode is used, the capacitor connected at VDD pin should not exceed the maximum specified by the “VDDst-cap” parameter. If capacitor value is exceeded, upon entering stop mode, VDD output current may exceed the IDDSWU and prevent the device to stay in stop mode. 17. Guaranteed by design; however, it is not production tested. 18. Guaranteed by design. 19. V2 specification with external capacitor - Stability requirement: C > 42 µF and ESR < 1.3 Ω (Tantalum capacitor), external resistor between base and emitter required - Measurement conditions: Ballast transistor MJD32C, C = 10 µF Tantalum, 2.2 k resistor between base and emitter of ballast transistor 20. Push/Pull structure with tri-state condition CS high. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 5.5 V ≤ V SUP ≤ 18 V, - 40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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