NE32484A datasheet(2/5 Pages) NEC

Il numero della parte	NE32484A

Spiegazioni elettronici	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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Produttore elettronici	NEC [NEC]

Homepage	http://www.nec.com/

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2 / 5 page

1.00

0.30

24.91

0.88

13.00

0.33

2.00

0.31

23.05

0.82

28.00

0.31

4.00

0.32

20.13

0.71

59.00

0.26

6.00

0.37

16.23

0.60

82.00

0.20

8.00

0.43

13.95

0.50

106.00

0.13

10.00

0.51

12.52

0.40

131.00

0.09

12.00

0.60

11.41

0.33

159.00

0.06

14.00

0.72

10.70

0.28

-166.00

0.05

16.00

0.86

10.29

0.28

-132.00

0.04

18.00

1.00

10.22

0.31

-104.00

0.04

SYMBOLS

PARAMETERS

UNITS

RATINGS

VDS

Drain to Source Voltage

V

4.0

VGS

Gate to Source Voltage

V

-3.0

IDS

Drain Current

mA

IDSS

IGRF

Gate Current

µA

200

TCH

Channel Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

PT

Total Power Dissipation

mW

165

Note:

1. Operation in excess of anyone of these parameters may result in

permanent damage.

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

TRANSCONDUCTANCE vs.

DRAIN CURRENT

Drain Current, IDS (mA)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Drain to Source Voltage, VDS (V)

Ambient Temperature, TA (

°C)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Drain Current, IDS (mA)

NOISE FIGURE AND

ASSOCIATED GAIN vs. DRAIN CURRENT

VDS = 2 V, f = 12 GHz

NE32484A

0

25

50

75

100

125

150

175

200

150

100

50

0

Free Air

Infinite

Heat sink

100

80

60

40

20

0

5

10

15

20

25

30

35

40

45

50

40

30

20

10

0

1.5

3.0

VGS

0

-0.1

-0.2

-0.3

-0.4

-0.5

(V)

1.4

1.2

1

0.8

0.6

0.4

0.2

0

14

13

12

11

10

9

8

7

0

510

15

20

25

30

35

NF

GA

FREQ.

NFMIN

GA

ΓOPT

(GHz)

(dB)

MAG

ANG

Rn/50

TYPICAL NOISE PARAMETERS (TA = 25˚C)

VC = 2 V, IDS =10 mA

Codice articolo simile - NE32484A

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	NE32484A	63Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE32484A	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
NEC	NE32484A-SL	63Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE32484A-SL	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
NEC	NE32484A-T1	63Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NE24283B	49Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	135Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32400	55Kb / 5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	141Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32684A	194Kb / 5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE24200	47Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32984D	51Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32584C	57Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE32584	58Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE24200	46Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

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