Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

NE32400 Scheda tecnica(PDF) 1 Page - NEC

Il numero della parte NE32400
Spiegazioni elettronici  ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  NEC [NEC]
Homepage  http://www.nec.com/
Logo NEC - NEC

NE32400 Scheda tecnica(HTML) 1 Page - NEC

  NE32400 Datasheet HTML 1Page - NEC NE32400 Datasheet HTML 2Page - NEC NE32400 Datasheet HTML 3Page - NEC NE32400 Datasheet HTML 4Page - NEC NE32400 Datasheet HTML 5Page - NEC  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
FEATURES
• VERY LOW NOISE FIGURE:
NF = 0.6 dB typical at f = 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 11.0 dB typical at f = 12 GHz
•LG = 0.25
µm, WG = 200 µm
DESCRIPTION
The NE32400 is a pseudomorphic Hetero-Junction FET chip
that utilizes the junction between Si-doped AlGaAs and undoped
InGaAs to create a two-dimensional electron gas layer with
very high electron mobility. This device features mushroom
shaped TiAl gates for decreased gate resistance and im-
proved power handling capabilities. The mushroom gate re-
sults in lower noise figure and high associated gain for con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE32400
PACKAGE OUTLINE
00 (CHIP)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NFOPT1
Optimum Noise Figure at VDS = 2 V, IDS = 10 mA
f = 4 GHz
dB
0.35
f = 12 GHz
dB
0.6
0.7
GA1
Associated Gain at VDS = 2 V, IDS = 10 mA
f = 4 GHz
dB
16.0
f = 12 GHz
dB
10.0
11.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dBm
9.5
VDS = 2 V, IDS = 20 mA
dBm
11.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dB
11.8
VDS = 2 V, IDS = 20 mA
dB
12.8
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Pinch-Off Voltage at VDS = 2 V, IDS = 100
µA
V
-2.0
-0.8
-0.2
gm
Transconductance at VDS = 2 V, IDS = 10 mA
mS
45
60
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
0.5
10
RTH (CH-C)2
Thermal Resistance (Channel-to-Case)
°C/W
260
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
NE32400
Frequency, f (GHz)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
California Eastern Laboratories
GA
NF
3
2.5
2
1.5
1
0.5
0
24
21
18
15
12
9
6
1
10
20
30


Codice articolo simile - NE32400

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
NEC
NE32400 NEC-NE32400 Datasheet
85Kb / 8P
   C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
More results

Descrizione simile - NE32400

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
California Eastern Labs
NE24283B CEL-NE24283B Datasheet
49Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE321000 CEL-NE321000_01 Datasheet
135Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE321000 CEL-NE321000 Datasheet
141Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE32684A NEC-NE32684A Datasheet
194Kb / 5P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
California Eastern Labs
NE24200 CEL-NE24200 Datasheet
47Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE32484A NEC-NE32484A_98 Datasheet
55Kb / 5P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32984D NEC-NE32984D Datasheet
51Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE32584C NEC-NE32584C_98 Datasheet
57Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
California Eastern Labs
NE32584 CEL-NE32584 Datasheet
58Kb / 6P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
logo
NEC
NE24200 NEC-NE24200_00 Datasheet
46Kb / 4P
   ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
More results


Html Pages

1 2 3 4 5


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com