Motore di ricerca datesheet componenti elettronici |
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FZT857 Scheda tecnica(PDF) 1 Page - Zetex Semiconductors |
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FZT857 Scheda tecnica(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak *V CEO = 300V * Very low saturation voltage *Excellent h FE specified up to 3 Amps PARTMARKING DETAIL - FZT857 COMPLEMENTARY TYPE - FZT957 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage V CEO 300 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 5A Continuous Collector Current I C 3.5 A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square. FZT857 C C E B |
Codice articolo simile - FZT857_03 |
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Descrizione simile - FZT857_03 |
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