MPSA28/MMBTA28/PZTA28, Rev A

NPN Darlington Transistor

MMBTA28

MPSA28

PZTA28

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

80

V

Collector-Base Voltage

80

V

Emitter-Base Voltage

12

V

Collector Current - Continuous

800

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA28

*MMBTA28

**PZTA28

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

This device is designed for applications requiring extremely

high current gain at collector currents to 500 mA. Sourced

from Process 03.

C

B

E

TO-92

C

B

E

SuperSOT-3

Mark: 3SS

B

C

C

SOT-223

E

 2001 Fairchild Semiconductor International