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IRLR3105PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLR3105PBF
Spiegazioni elettronici  AUTOMOTIVE MOSFET
Download  11 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLR3105PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRLR/U3105PbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 15A, VGS = 0V
„
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 25°C, IF = 15A, VDD = 28V
Qrr
Reverse RecoveryCharge
–––
82
120
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
25
100
A
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes
 through ˆ are on page 11
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.056 –––
V/°C Reference to 25°C, ID = 1mA
–––
30
37
VGS = 10V, ID = 15A
„
–––
35
43
VGS = 5.0V, ID = 13A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
15
––– –––
S
VDS = 25V, ID = 15A
„
–––
–––
20
µA
VDS = 55V, VGS = 0V
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
20
ID = 15A
Qgs
Gate-to-Source Charge
–––
–––
5.6
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
9.0
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
8.0
–––
VDD = 28V
tr
Rise Time
–––
57
–––
ID = 15A
td(off)
Turn-Off Delay Time
–––
25
–––
RG = 24Ω
tf
Fall Time
–––
37
–––
VGS = 5.0V, See Fig. 10
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
710 –––
VGS = 0V
Coss
Output Capacitance
–––
150 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
28
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
890 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
110 –––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
–––
210 –––
VGS = 0V, VDS = 0V to 44V
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
nH
LS
Internal Source Inductance
‡
–––
7.5
–––
LD
Internal Drain Inductance
–––
4.5
–––
IDSS
Drain-to-Source Leakage Current
m


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