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KSB798 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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KSB798 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSB798 Rev. B1 July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Absolute Maximum Ratings T a = 25°C unless otherwise noted * PW ≤ 10ms, Duty cycle ≤ 50% Electrical Characteristics T a = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -1.0 A ICP Collector Current (Pulse) * -1.5 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -25 V BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = -30V, IE = 0 -0.1 µA IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -0.1 µA hFE1 hFE2 DC Current Gain VCE = -1V, IC = -0.1A VCE = -1V, IC = -1.0A 90 50 400 VCE (sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A -0.4 V VBE (sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A -1.2 V VBE (on) Base-Emitter On Voltage VCE = -6V, IC = -10mA -0.6 -0.7 V fT Current Gain Bandwidth Product VCE = -6V, IC = -10mA 110 MHz Cob Output Capacitance VCB = -6V, IE = 0, f = 1MHz 18 pF SOT-89 1 1. Base 2. Collector 3. Emitter 79 8 PY W W hFE grage Year code Weekly code Marking |
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