FQA7N80C_F109 datasheet(3/9 Pages) FAIRCHILD

Il numero della parte	FQA7N80C_F109

Spiegazioni elettronici	800V N-Channel MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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FQA7N80C Rev. A1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

68

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 50V

2. 250µs PulseTest

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top:

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

Bottom: 5.5V

Notes :

※

1. 250µs PulseTest

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

0.20.4

0.60.8

1.01.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs PulseTest

25℃

V

SD, Source-Drain voltage [V]

0

3

6

9

12

15

18

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS = 20V

V

GS = 10V

Note: T

※

J = 25℃

I

D, Drain Current [A]

10

-1

10

0

10

1

0

500

1000

1500

2000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f =1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

25

30

0

2

4

6

8

10

12

V

DS = 400V

V

DS = 160V

V

DS = 640V

Note : I

※

D = 6.6A

Q

G, Total Gate Charge [nC]

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