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FMB2907A Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FMB2907A Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page 4 Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 0 100 200 300 400 500 I - COLLECTOR CURRENT (mA) C 125 °C 25 °C - 40 °C V = 5V CE Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 50 0 4 8 12 16 20 REVERSE BIAS VOLTAGE (V) C ob C ib Collect or-Cutoff Current vs Ambient Temperature 25 50 75 100 125 0.01 0.1 1 10 100 T - AMBIE NT TEMP ERATURE ( C) A ° V = 35V CB Collector-Emitter Saturation Voltage vs Collect or Current 110 100 500 0 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRE NT (mA) C β = 10 25 °C - 40 °C 125 °C Base-Emitter Saturation Voltage vs Collector Current 110 100 500 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRE NT (mA) C 25 °C - 40 °C 125 °C β = 10 Base Emitter ON Voltage vs Collect or Current 0.1 1 10 25 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRE NT (mA) C V = 5V CE 25 °C - 40 °C 125 °C PNP Multi-Chip General Purpose Amplifier (continued) |
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