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FDD8444 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD8444 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDD8444 Rev B (W) www.fairchildsemi.com 2 MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (VGS = 10V) (Note 1) 145 A Continuous (VGS = 10V, with RθJA = 52oC/W) 20 Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 535 mJ PD Power Dissipation 153 W Derate above 25oC1.02 W/oC TJ, TSTG Operating and Storage Temperature -55 to +175 oC RθJC Thermal Resistance, Junction to Case 0.98 oC/W RθJA Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8444 FDD8444 TO-252AA 13” 12mm 2500 units Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V - - 1 µA VGS = 0V TJ = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 2.5 4 V rDS(on) Drain to Source On Resistance ID = 50A, VGS= 10V - 4 5.2 m Ω ID = 50A, VGS= 10V, TJ = 175oC -7.2 9.4 Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 6195 - pF Coss Output Capacitance - 585 - pF Crss Reverse Transfer Capacitance - 332 - pF RG Gate Resistance f = 1MHz - 1.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 50A Ig = 1.0mA -89 116 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V 43 56 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 11 14.3 nC Qgs Gate to Source Gate Charge -23 - nC Qgs2 Gate Charge Threshold to Plateau - 11 - nC Qgd Gate to Drain “Miller“ Charge - 20 - nC |
Codice articolo simile - FDD8444_06 |
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Descrizione simile - FDD8444_06 |
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