2N2484_1 datasheet(1/2 Pages) MICROSEMI

Il numero della parte	2N2484

Spiegazioni elettronici	NPN SILICON LOW POWER TRANSISTOR

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Produttore elettronici	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

NPN SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/376

Devices

Qualified Level

2N2484

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N2484

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Collector Current

IC

50

mAdc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

360

1.2

mW

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

146

0C/W

1) Derate linearly 2.06 mW/

0C above TA = +250C

2) Derate linearly 6.85 mW/

0C above TC = +250C

TO- 18*

(TO-206AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

IC = 10 mAdc

V(BR)CEO

60

Vdc

Collector-Emitter Cutoff Current

VCE = 45 Vdc

ICES

5.0

ηAdc

Collector-Base Cutoff Current

VCB = 45 Vdc

VCB = 60 Vdc

ICBO

5.0

10

ηAdc

µAdc

Collector-Emitter Cutoff Current

VCE = 5.0 Vdc

ICEO

2.0

ηAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

VEB = 6.0 Vdc

IEBO

2.0

10

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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