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FDD6632 Scheda tecnica(PDF) 8 Page - Fairchild Semiconductor |
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FDD6632 Scheda tecnica(HTML) 8 Page - Fairchild Semiconductor |
8 / 11 page ©2004 Fairchild Semiconductor Corporation FDD6632 Rev. B1 PSPICE Electrical Model .SUBCKT FDD6632 2 1 3 ; rev March 2002 Ca 12 8 1.8e-10 Cb 15 14 1.9e-10 Cin 6 8 2.35e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 32.05 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 3.84e-9 Ldrain 2 5 1.00e-9 Lsource 3 7 4e-9 RLgate 1 9 38.4 RLdrain 2 5 10 RLsource 3 7 40 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 12e-3 Rgate 9 20 4.2 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 3e-2 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*40),3))} .MODEL DbodyMOD D (IS=9.5E-12 RS=2.3e-2 XTI=1 IKF=15.00 N=1.15 TRS1=1.0e-3 TRS2=8.0e-7 + CJO=1.7e-10 TT=7e-9 M=0.47) .MODEL DbreakMOD D (RS=1e-1 TRS1=1.12e-3 TRS2=1.25e-6) .MODEL DplcapMOD D (CJO=8.1e-11 IS=1e-30 N=10 M=0.43) .MODEL MmedMOD NMOS (VTO=1.76 KP=.6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=4.2) .MODEL MstroMOD NMOS (VTO=2.08 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MweakMOD NMOS (VTO=1.52 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=42 RS=.1) .MODEL RbreakMOD RES (TC1=1.01e-3 TC2=1.00e-7) .MODEL RdrainMOD RES (TC1=9e-3 TC2=4e-5) .MODEL RSLCMOD RES (TC1=5E-3 TC2=1E-6) .MODEL RsourceMOD RES (TC1=1.0e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-1.5e-3 TC2=-7e-6) .MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=1.2e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.6 VOFF=-0.1) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.1 VOFF=-0.6) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 |
Codice articolo simile - FDD6632_04 |
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Descrizione simile - FDD6632_04 |
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