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IRFS4410PBF Datasheet(Scheda tecnica) 3 Page - International Rectifier

Numero della parte IRFS4410PBF
Dettagli  HEXFET Power MOSFET
Download  11 Pages
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Produttore  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFB/S/SL4410PbF
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
2
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
ID = 58A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20406080
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 80V
VDS= 50V
VDS= 20V
ID= 58A
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V




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