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FDC5612 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDC5612
Spiegazioni elettronici  60V N-Channel PowerTrench짰 MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDC5612 Rev. C2
FDC5612
60V N-Channel PowerTrench
® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
December 2004
© 2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
- Continuous
(Note 1a)
4.3
A
Drain Current
- Pulsed
20
PD
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.562
FDC5612
7’’
8mm
3000 units
Features
4.3 A, 60 V. R
DS(ON) = 0.055 Ω
@ V
GS = 10 V
R
DS(ON) = 0.064 Ω
@ V
GS = 6 V
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
5
6
4
1
2
3
SuperSOTTM-6
S
D
D
D
D
G


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