Motore di ricerca datesheet componenti elettronici |
|
J112 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
|
J112 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 6 page July 1993 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified Drain-source voltage ±VDS max. 40 V Gate-source voltage −V GSO max. 40 V Gate-drain voltage −V GDO max. 40 V Gate forward current (DC) IG max. 50 mA Total power dissipation up to Tamb =50 °CPtot max. 400 mW Storage temperature range Tstg −65 to + 150 °C Junction temperature Tj max. 150 °C From junction to ambient in free air Rth j-a = 250 K/W J111 J112 J113 Gate reverse current −VGS = 15 V; VDS =0 −IGSS max. 1 1 1 nA Drain cut-off current VDS =5 V; −VGS = 10 V −IDSX max. 1 1 1 nA Drain saturation current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Gate-source breakdown voltage −I G =1 µA; VDS =0 −V(BR)GSS min. 40 40 40 V Gate-source cut-off voltage VDS = 5 V; ID =1 µA −VGS off min. 3 1 0.5 V max. 10 5 3 V Drain-source on-state resistance VDS = 0.1 V; VGS =0 RDSon max. 30 50 100 Ω |
Codice articolo simile - J112 |
|
Descrizione simile - J112 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |