1

Semiconductor

January 1999

CA3141

High-Voltage Diode Array For Commercial,

Industrial and Military Applications

Features

• Matched Monolithic Construction

• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)

• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications

• Balanced Modulators or Demodulators

• Analog Switches

• High-Voltage Diode Gates

• Current Ratio Detectors

Description

The CA3141E High Voltage Diode Array Consists of ten gen-

eral purpose high reverse breakdown diodes. Six diodes are

internally connected to form three common cathode diode

pairs, and the remaining four diodes are internally connected

to form two common anode diode pairs. Integrated circuit

construction assures excellent static and dynamic matching

of the diodes, making the CA3141 extremely useful for a

wide variety of applications in communications and switching

systems.

Pinout

CA3141

(PDIP)

TOP VIEW

Part Number Information

PART NUMBER

TEMP.

PACKAGE

PKG.

NO.

CA3141E

-55 to 125

16 Ld PDIP

E16.3

14

15

16

9

13

12

11

10

1

2

3

4

5

7

6

8

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

Copyright

File Number

906.4

OBSOLETE

PRODUCT

NO RECOMMENDED

REPLA

CEMENT

Call

Central

Applications

1-800-442-7747

or email:

centapp@harris.com