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FDZ493P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FDZ493P
Spiegazioni elettronici  P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
Download  6 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ493P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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FDZ493P Rev.B(W)
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3
Typical Characteristics T
J = 25°C unless otherwise noted
Figure 1.
0.00.5
1.01.5
0
2
4
6
8
10
VGS = -2.5V
VGS = -3.0V
VGS = -2.0V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure2.
02
46
8
10
0.6
1.0
1.4
1.8
2.2
2.6
VGS = -3.5V
VGS = -3.0V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
-ID, DRAIN CURRENT(A)
VGS = -2.5V
VGS = -2.0V
VGS = -4.5V
NormalizedOn-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -4.6A
VGS = -4.5V
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
1
2345
50
100
150
200
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
TJ = 125oC
TJ = 25oC
ID = -2.3A
-VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
VDS=-5V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
TJ = -55oC
TJ = 25oC
TJ = 125oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.2
0.40.60.8
1.01.2
1E-4
1E-3
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 125oC
VGS = 0V
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current


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