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MC100EPT25MNR4G Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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MC100EPT25MNR4G Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 9 page MC100EPT25 http://onsemi.com 4 Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 4) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max fmax Maximum Frequency (See Figure 2 Fmax/JITTER) 275 275 275 MHz tPLH, tPHL Propagation Delay to Output Differential (Cross−Point to 1.5 V) 500 950 1300 800 950 1600 800 960 1600 ps tSKPP Device−to−Device Skew (Note 5) 500 500 500 ps tJITTER Random Clock Jitter (RMS) (See Figure 2 Fmax/JITTER) 0.2 < 1 0.2 < 1 0.2 < 1 ps VPP Input Voltage Swing (Differential) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times Q, Q (0.8 V − 2.0 V) 300 900 474 1160 600 1400 300 900 459 1100 600 1400 300 900 457 1100 600 1400 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3. 5. Skews are measured between outputs under identical conditions. 0 400 800 1200 1600 2000 2400 2800 25 100 175 250 325 400 475 550 625 1 2 3 4 5 6 7 Figure 2. Fmax/Jitter FREQUENCY (MHz) (JITTER) VOH VOL 0.5 V |
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