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MC78T12CT Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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MC78T12CT Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 12 page MC78T00 Series http://onsemi.com 2 MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.) Rating Symbol Value Unit Input Voltage (5.0 V − 12 V) Input Voltage (15 V) VI 35 40 Vdc Power Dissipation and Thermal Characteristics Plastic Package (Note 1) TA = +25°C Thermal Resistance, Junction−to−Air TC = +25°C Thermal Resistance, Junction−to−Case PD RqJA PD RqJC Internally Limited 65 Internally Limited 2.5 °C/W °C/W Storage Junction Temperature Tstg +150 °C Operating Junction Temperature Range (MC78T00C, AC) TJ 0 to +125 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W. ELECTRICAL CHARACTERISTICS (Vin = 10 V, IO = 3.0 A, 0°C ≤ TJ ≤ 125°C, PO ≤ Pmax (Note 2), unless otherwise noted.) MC78T05AC MC78T05C Characteristics Symbol Min Typ Max Min Typ Max Unit Output Voltage (5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C) (5.0 mA ≤ IO ≤ 3.0 A; 5.0 mA ≤ IO ≤ 2.0 A, 7.3 Vdc ≤ Vin ≤ 20 Vdc) VO 4.9 4.8 5.0 5.0 5.1 5.2 4.8 4.75 5.0 5.0 5.2 5.25 Vdc Line Regulation (Note 3) (7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C; 7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 1.0 A, TJ = +25°C; 8.0 Vdc ≤ Vin ≤ 12 Vdc, IO = 3.0 A, TJ = +25°C; 7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A) Regline − 3.0 25 − 3.0 25 mV Load Regulation (Note 3) (5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C) (5.0 mA ≤ IO ≤ 3.0 A) Regload − − 10 15 30 80 − − 10 15 30 80 mV Thermal Regulation (Pulse = 10 ms, P = 20 W, TA = +25°C) Regtherm − 0.001 0.01 − 0.002 0.03 %VO/W Quiescent Current (5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C) (5.0 mA ≤ IO ≤ 3.0 A) IB − − 3.5 4.0 5.0 6.0 − − 3.5 4.0 5.0 6.0 mA Quiescent Current Change (7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C; 5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C; 7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A) DIB − 0.3 1.0 − 0.3 1.0 mA Ripple Rejection (8.0 Vdc ≤ Vin ≤ 18 Vdc, f = 120 Hz, IO = 2.0 A, TJ = 25°C) RR 62 75 − 62 75 − dB Dropout Voltage (IO = 3.0 A, TJ = +25°C) Vin−VO − 2.2 2.5 − 2.2 2.5 Vdc Output Noise Voltage (10 Hz ≤ f ≤ 100 kHz, TJ = +25°C) Vn − 10 − − 10 − mV/VO Output Resistance (f = 1.0 kHz) RO − 2.0 − − 20 − m W 2. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W. 3. Line and load regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty cycle is used. |
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